PART |
Description |
Maker |
BAV21S 1N4150-B |
0.2 A, 250 V, SILICON, SIGNAL DIODE
|
Diodes, Inc. DIODES INC
|
BAV20 BAV21 |
0.25 A, 200 V, SILICON, SIGNAL DIODE, DO-35 0.25 A, 250 V, SILICON, SIGNAL DIODE, DO-35
|
|
MD60F18 |
1,800 V Rectifiers 250 mA Forward Current 30 ns - 50 ns Recovery Time 0.25 A, SILICON, SIGNAL DIODE
|
Voltage Multipliers, Inc.
|
SHM120UFSMS |
50-250 mA 1500-14000 VOLTS 60-100 Nsec HIGH VOLTAGE RECTIFIER 0.1 A, SILICON, SIGNAL DIODE
|
Solid State Devices, Inc.
|
SHM100SMS |
50-250 mA 1500-14000 VOLTS 200 usec HIGH VOLTAGE RECTIFIER 0.1 A, 10000 V, SILICON, SIGNAL DIODE
|
Solid State Devices, Inc.
|
2SK1228TMG MA3027-LH MA3027TSK MA3150-LTMG MA3360- |
100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 2.7 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 0.1 A, SILICON, SIGNAL DIODE SILICON, PIN DIODE UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 0.035 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
PANASONIC CORP
|
BAS21T-7-F |
SURFACE MOUNT FAST SWITCHING DIODE 0.2 A, 250 V, SILICON, SIGNAL DIODE
|
Diodes Inc. Diodes, Inc.
|
ZVN4525G ZVN4525GTA ZVN4525GTC |
PNP 30CM DIFF W/ADJ RoHS Compliant: Yes 310 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 250V N-CHANNEL ENHANCEMENT MODE MOSFET 310 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-channel MOSFET
|
Zetex Semiconductor PLC Diodes Incorporated ZETEX[Zetex Semiconductors]
|
CPR1-120LEADFREE CPR1-080LEADFREE CPR1-100LEADFREE |
1 A, 1200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN 1 A, 800 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN 1 A, 1000 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN 1 A, 100 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN 1 A, 600 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN 1 A, 400 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN 1 A, 200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
|
Central Semiconductor, Corp.
|
87667-4002 0876674002 |
6.35mm (.250) Pitch Power, 2.54mm (.100) Pitch Signal, EXTreme PowerPlus S-Pb Header, Through Hole, Right Angle, Screw Mount, Short Blade, 30 Circuits, Signal 24
|
Molex Electronics Ltd.
|
|